Samsung’s new 30-nanometer-process memory modules are said to run at more than twice the speed of current DDR3 modules, and will also use less power.
Samsung says that typical DDR3 memory modules available today use around 1.5V of electrical current, whereas its new DDR4 modules will use just 1.2V.
Data transfer speeds on the new DDR4 module can reach 2.133Gbps, according to the company, but it could eventually reach higher speeds of up to 4Gbps.
This all sounds very impressive, but gave no details as to when we can expect DDR4 to hit the market. Oh, CES, you geek tease.
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